Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Produkteigenschaften
- Artikelnummer: 9780521516846
- Medium: Buch
- ISBN: 978-0-521-51684-6
- Verlag: Cambridge University Press
- Erscheinungstermin: 20.01.2011
- Sprache(n): Englisch
- Auflage: Erscheinungsjahr 2011
- Produktform: Gebunden, HC gerader Rücken kaschiert
- Gewicht: 1019 g
- Seiten: 488
- Format (B x H x T): 175 x 250 x 31 mm
- Ausgabetyp: Kein, Unbekannt