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Schmidt

Lateral Alignment of Epitaxial Quantum Dots

Medium: Buch
ISBN: 978-3-642-07991-7
Verlag: Springer
Erscheinungstermin: 25.11.2010
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Accurate positioning of self-organized nanostructures on a substrate surface can be regarded as the Achilles’ heel of nanotechnology. This perception also applies to self-assembled semiconductor quantum dots. This book describes the full range of possible strategies to laterally align self-assembled quantum dots on a substrate surface, starting from pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning. The text addresses both short- and long-range ordering phenomena and paves the way for the future high integration of single quantum dot devices on a single chip. Contributions by the best-known experts in this field ensure that all relevant quantum-dot heterostructures are elucidated from diverse perspectives.

Produkteigenschaften

  • Artikelnummer: 9783642079917
  • Medium: Buch
  • ISBN: 978-3-642-07991-7
  • Verlag: Springer
  • Erscheinungstermin: 25.11.2010
  • Sprache(n): Englisch
  • Auflage: 1. Auflage. Softcover version of original hardcover Auflage 2007
  • Serie: NanoScience and Technology
  • Produktform: Kartoniert, Paperback
  • Gewicht: 1077 g
  • Seiten: 707
  • Format (B x H x T): 155 x 235 x 39 mm
  • Ausgabetyp: Kein, Unbekannt

Themen

Autoren/Hrsg.

Herausgeber

Schmidt, Oliver G.

Lateral Self-Alignment.- Physical Mechanisms of Self-Organized Formation of Quantum Dots.- Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001).- Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions.- Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes.- Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth – the SiGe/Si System.- Ge Quantum Dot Self-Alignment on Vicinal Substrates.- Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed SixGe1?x Buffer Layer.- Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs (110) Cleavage Planes.- Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures.- Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering.- Towards Quantum Dot Crystals via Multilayer Stacking on Different Indexed Surfaces.- Forced Alignment.- One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates.- Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications.- Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation.- Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates.- Metallization and Oxidation Templating of Surfaces for Directed Island Assembly.- Site Control and Selective-Area Growth Techniques of In As Quantum Dots with High Density and High Uniformity.- In(Ga)As Quantum Dot Crystals on Patterned GaAs(001) Substrates.- Directed Arrangement of Ge Quantum Dots on Si Mesas by Selective Epitaxial Growth.- Directed Self-Assembly of Quantum Dots by Local-Chemical-Potential Control via Strain Engineering on PatternedSubstrates.- Structural and Luminescence Properties of Ordered Ge Islands on Patterned Substrates.- Formation of Si and Ge Nanostructures at Given Positions by Using Surface Microscopy and Ultrathin SiO2 Film Technology.- Pyramidal Quantum Dots Grown by Organometallic Chemical Vapor Deposition on Patterned Substrates.- Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks.- GaAs and InGaAs Position-Controlled Quantum Dots Fabricated by Selective-Area Metalloorganic Vapor Phase Epitaxy.- Spatial InAs Quantum Dot Positioning in GaAs Microdisk and Posts.