This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in the bulk form, with a strong band gap variation with film thickness predicted and recently observed in optical experiments. The proposed theory is based on a specially designed hybrid k.p tight-binding model approach (HkpTB), which uses an intralayer k.p Hamiltonian to describe the InSe monolayer, and tight-binding-like interlayer hopping. Electronic and optical absorption spectra are determined, and a detailed description of subbands of electrons in few-layer films and the influence of spin-orbit coupling is provided. The author shows that the principal optical excitations of InSe films with the thickness from 1 to 15 layers broadly cover the visible spectrum, with the possibility of extending optical functionality into the infrared and THz range using intersubband transitions.
Produkteigenschaften
- Artikelnummer: 9783030257170
- Medium: Buch
- ISBN: 978-3-030-25717-0
- Verlag: Springer International Publishing
- Erscheinungstermin: 25.08.2020
- Sprache(n): Englisch
- Auflage: 1. Auflage 2019
- Serie: Springer Theses
- Produktform: Kartoniert, Paperback
- Gewicht: 166 g
- Seiten: 87
- Format (B x H x T): 155 x 235 x 6 mm
- Ausgabetyp: Kein, Unbekannt