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Wetzig / Schmidt

Ion Beams in Materials Processing and Analysis

Medium: Buch
ISBN: 978-3-7091-1733-0
Verlag: Springer Vienna
Erscheinungstermin: 28.11.2014
Lieferfrist: bis zu 10 Tage
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.

Produkteigenschaften


  • Artikelnummer: 9783709117330
  • Medium: Buch
  • ISBN: 978-3-7091-1733-0
  • Verlag: Springer Vienna
  • Erscheinungstermin: 28.11.2014
  • Sprache(n): Englisch
  • Auflage: 2013
  • Produktform: Kartoniert, Paperback
  • Gewicht: 6438 g
  • Seiten: 418
  • Format (B x H x T): 155 x 235 x 24 mm
  • Ausgabetyp: Kein, Unbekannt

Autoren/Hrsg.

Autoren

Wetzig, Klaus

Schmidt, Bernd

Preface

1. Introduction

2. Fundamentals

3. Ion Beam Technology

3.1 Principles of Ion Accelerators

3.1.1 Low Energy Ion Accelerators (Ion Implanters)

3.1.2 High Energy Ion Accelerators

3.2 Ion Sources

3.2.1 Hot Filament (Hot Cathode) Ion Sources

3.2.2 Cold Cathode Ion Source (Penning Ion Source)

3.2.3 High Frequency (RF) Ion Source

3.2.4 Duoplasmatron Ion Source

3.2.5 Ion Sources for Electrostatic Accelerators

3.2.6 Cesium Sputtering Ion Sources

3.2.7 Field-Evaporation or Liquid Metal Ion Sources (LMIS)

3.2.8 Beam Extraction from Ion Sources

3.3 Ion Acceleration

3.4 Ion Beam Handling

3.4.1 Ion Mass Separation

3.4.2 Ion Beam Focusing

3.4.3 Ion Beam Scanning

3.4.4 Ion Beam Current Measurement

3.4.5 Ion Detection (Detectors, Spectrometers)

3.5 Ion Implantation Systems

3.5.1 Common Low Energy Beam Line Implanters

3.5.2 Specialized Low Energy Beam Line Implanters

3.5.3 High Energy Beam Line Implanters

3.5.4 Plasma Based Ion Implanters (PBII)

3.6 Electrostatic Ion Accelerator Systems

3.6.1 Single-Stage Electrostatic Accelerators

3.6.2 Two-Stage Electrostatic Accelerators

3.7 Focused Ion Beam Systems

3.7.1 Low Energy Focused Ion Beams

3.7.2 High Energy Focused Ion Beams

4. Materials Processing

4.1 Ion Irradiation and Damage Annealing

4.2 Ion Implantation into Semiconductors

4.2.1 Ion Implantation into Silicon

4.2.1.1 Advanced CMOS Technology

4.2.1.2 Defect Engineering and Epi-Layer Replacing in High Power Devices

4.2.1.3 Silicon Detector and Sensor Technology

4.2.2 Ion Implantation into Germanium

4.2.3 Ion Implantation into Compound Semiconductors

4.2.3.1 III-V Semiconductors

4.2.3.2 Group III-Nitride Materials

4.2.3.3 Silicon Carbide

4.3 Ion Beam Synthesis of New Phases in Solids

4.3.1 Buried Insulating La